Method for fabricating a three-dimensional inductor carrier with metal core and structure thereof

ABSTRACT

A method for fabricating a inductor carrier comprises the steps of providing a substrate with a protective layer; forming a first photoresist layer on protective layer; patterning the first photoresist layer to form a first opening and first apertures; forming a first metal layer within first opening and first apertures; removing the first photoresist layer; forming a first dielectric layer on protective layer; forming a second photoresist layer on first dielectric layer; patterning the second photoresist layer to form a second aperture and a plurality of third apertures; forming a second metal layer within second aperture and third apertures; removing the second photoresist layer; forming a second dielectric layer on first dielectric layer; forming a third photoresist layer on second dielectric layer; patterning the third photoresist layer to form a fifth aperture and sixth apertures; forming a third metal layer within fifth aperture and sixth apertures.

FIELD OF THE INVENTION

The present invention is generally relating to a manufacturing methodfor a carrier, more particularly to the method for fabricating athree-dimensional inductor carrier with metal core.

BACKGROUND OF THE INVENTION

A conventional inductor is best-known as planar inductor, and mentionedplanar inductor may be utilized for designs of inductor pattern andtrace pattern in a same plane. Owing to the reason that the planarinductor and the trace pattern are located in the same plane, adisturbance from parasitic capacitance is occurred and has to beovercome. Therefore, the chip size corresponded to the design patterncan not be decreased. Besides, the planar inductor merely forms a vortexstructure instead of a toroid structure in a same radius.

SUMMARY

The primary object of the present invention is to provide a method forfabricating a three-dimensional inductor carrier with metal corecomprising the steps of: providing a substrate having a surface, atleast one first bond pad and a protective layer, wherein the first bondpad is disposed on the surface, the protective layer is formed on thesurface, and the protective layer comprises at least one first padopening, a first disposing area, and a plurality of second disposingareas, wherein the first pad opening reveals the first bond pad and islocated at the first disposing area; forming a first photoresist layeron the protective layer; patterning the first photoresist layer to format least one first opening and a plurality of first apertures, whereinthe first opening reveals the first disposing area, and the firstapertures reveal the second disposing areas; forming a first metal layerwithin the first opening and the first apertures and enabling the firstmetal layer to have a first conductive pad and a plurality of firstinductor portions, and each of the first inductor portions comprises afirst connection terminal, a second connection terminal and a firstheight; removing the first photoresist layer; forming a first dielectriclayer on the protective layer and covering the first metal layer withthe first dielectric layer, wherein the first dielectric layer comprisesa second pad opening, a plurality of first connection openings and aplurality of second connection openings, wherein the second pad openingreveals the first conductive pad, each of the first connection openingsreveals each of the first connection terminals, and each of the secondconnection openings reveals each of the second connection terminals;forming a second photoresist layer on the first dielectric layer;patterning the second photoresist layer to form a second aperture, aplurality of third apertures, a plurality of fourth apertures and aslot, wherein the second aperture reveals the first conductive pad, eachof the third apertures reveals each of the first connection terminals,each of the fourth apertures reveals each of the second connectionterminals, the slot reveals the first dielectric layer and is locatedbetween each of the third apertures and each of the fourth apertures,wherein the second aperture comprises a first top, a first depth isformed between the first top and the first conductive pad, each of thethird apertures comprises a second top, a second depth is formed betweeneach of the second tops and each of the first connection terminals, eachof the fourth apertures comprises a third top, a third depth is formedbetween each of the third tops and each of the second connectionterminals, the slot comprises a fourth top, a fourth depth is formedbetween the fourth top and the first dielectric layer, and the fourthdepth is respectively smaller than the first, second and the thirddepth; forming a second metal layer within the second aperture, thethird apertures, the fourth apertures and the slot and enabling thesecond metal layer to have a second inductor portion, a plurality ofthird inductor portions, a plurality of fourth inductor portions and ametal core, wherein the second inductor portion is coupled with thefirst conductive pad and comprises a first top surface and a secondheight, each of the third inductor portions is coupled with each of thesecond connection terminals and comprises a second top surface and athird height, each of the fourth inductor portions is coupled with eachof the first connection terminals and comprises a third top surface anda fourth height, wherein the first height is respectively smaller thanthe second, third and fourth height, the metal core comprises a bottomsurface, the first metal layer comprises a first upper surface, and afirst interval is formed between the bottom surface and the first uppersurface; removing the second photoresist layer; forming a seconddielectric layer on the first dielectric layer and covering the secondmetal layer with the second dielectric layer, wherein the seconddielectric layer comprises a first exposed hole, a plurality of secondexposed holes and a plurality of third exposed holes, the first exposedhole reveals the first top surface, each of the second exposed holesreveals each of the second top surfaces, and each of the third exposedholes reveals each of the third top surfaces; forming a thirdphotoresist layer on the second dielectric layer; patterning the thirdphotoresist layer to form a fifth aperture and a plurality of sixthapertures, wherein the fifth aperture reveals the first top surface andthe second top surface, and each of the sixth apertures reveals each ofthe second top surfaces and each of the third top surfaces; forming athird metal layer within the fifth aperture and the sixth apertures andenabling the third metal layer to have a fifth inductor portion and aplurality of sixth inductor portions, wherein the fifth inductor portionis coupled with the second inductor portion and the third inductorportion, each of the sixth inductor portions is coupled with the thirdinductor portion and the fourth inductor portion, the fifth inductorportion comprises a fifth height, each of the sixth inductor portionscomprises a sixth height, the fifth height is respectively smaller thanthe second, third and fourth height, and the sixth height isrespectively smaller than the second, third and fourth height. In thisinvention, the inductor carrier possesses the structure ofthree-dimensional inductor and additional metal core thereby reducingthe chip size and the layout area in a same plane. Besides, mentionedstructure may increase coil density and magnetic flux. Furthermore, themagnetic flux direction of the inductor changes from normal tohorizontal for three-dimensional designs of the inductor, and it isbeneficial for electro-magnetic coupling of flip chip module in the flipchip process.

DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 1P are three-dimensional diagrams illustrating a method forfabricating a three-dimensional inductor carrier with metal core inaccordance with a first preferred embodiment of the present invention.

FIGS. 2A to 2P are cross-section diagrams illustrating a method forfabricating a three-dimensional inductor carrier with metal core inaccordance with a first preferred embodiment of the present invention.

FIG. 3 is a cross-section diagram illustrating a method for fabricatinga three-dimensional inductor carrier with metal core in accordance witha second preferred embodiment of the present invention.

FIG. 4 is a cross-section diagram illustrating a method for fabricatinga three-dimensional inductor carrier with metal core in accordance witha third preferred embodiment of the present invention.

FIG. 5 is a three-dimensional diagram illustrating a method forfabricating a three-dimensional inductor carrier with metal core inaccordance with a fourth preferred embodiment of the present invention.

FIG. 6 is a three-dimensional diagram illustrating a method forfabricating a three-dimensional inductor carrier with metal core inaccordance with a fifth preferred embodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

Please refers to FIGS. 1A to 1P and 2A to 2P, a method for fabricating athee dimensional inductor carrier with metal core in accordance with afirst preferred embodiment of the present invention comprises the stepsof: first, please referring to FIGS. 1A and 2A, providing a substrate110 having a surface 111, at least one first bond pad 112, a protectivelayer 113 and a second bond pad 114, wherein the first bond pad 112 isdisposed on the surface 111, the protective layer 113 is formed on thesurface 111 and comprises at least one first pad opening 113 a, a firstdisposing area 113 b and a plurality of second disposing areas 113 c,the first pad opening 113 a reveals the first bond pad 112 and islocated at the first disposing area 113 b, the material of the substrate110 can be chosen from one of Aluminum-Oxide substrate, Aluminum-Nitridesubstrate, Gallium-Arsenic substrate or glass substrate, and theprotective layer 113 can be a passivation layer or re passivation layer;next, with reference to FIGS. 1B and 2B, forming a first photoresistlayer 120 on the protective layer 113; thereafter, referring to FIGS. 1Cand 2C, patterning the first photoresist layer 120 to form at least onefirst opening 121 and a plurality of first apertures 122, the firstopening 121 reveals the first disposing area 113 b, and the firstapertures 122 reveal the second disposing areas 113 c; afterwards,referring to FIGS. 1D and 2D, forming a first metal layer 130 within thefirst opening 121 and the first apertures 122 and enabling the firstmetal layer 130 to have a first conductive pad 131 and a plurality offirst inductor portions 132, wherein each of the first inductor portions132 comprises a first connection terminal 132 a, a second connectionterminal 132 b and a first height H1; after that, with reference toFIGS. 1E and 2E, removing the first photoresist layer 120; next,referring to FIGS. 1F and 2F, forming a first dielectric layer 140 onthe protective layer 113 and covering the first metal layer 130 with thefirst dielectric layer 140, wherein the first dielectric layer 140comprises a second pad opening 141, a plurality of first connectionopenings 142 and a plurality of second connection openings 143, whereinthe second pad opening 141 reveals the first conductive pad 131, each ofthe first connection openings 142 reveals each of the first connectionterminals 132 a, and each of the second connection openings 143 revealseach of the second connection terminals 132 b; later, referring to FIGS.1G and 2G, forming a second photoresist layer 150 on the firstdielectric layer 140; afterwards, with reference to FIGS. 1H and 2H,patterning the second photoresist layer 150 to form a second aperture151, a plurality of third apertures 152, a plurality of fourth apertures153 and a slot 154, wherein the second aperture 151 reveals the firstconductive pad 131, each of the third apertures 152 reveals each of thefirst connection terminals 132 a, each of the fourth apertures 153reveals each of the second connection terminals 132 b, the slot 154reveals the first dielectric layer 140 and is located between each ofthe third apertures 152 and each of the fourth apertures 153, whereinthe second aperture 151 comprises a first top 151 a, a first depth A1 isformed between the first top 151 a and the first conductive pad 131,each of the third aperture 152 comprises a second top 152 a, a seconddepth A2 is formed between each of the second tops 152 a and each of thefirst connection terminals 132 a, each of the fourth apertures 153comprises a third top 153 a, a third depth A3 is formed between each ofthe third tops 153 a and each of the second connection terminals 132 b,the slot 154 comprises a fourth top 154 a, a fourth depth A4 is formedbetween the fourth top 154 a and the first dielectric layer 140, and thefourth depth A4 is respectively smaller than the first depth A1, seconddepth A2 and the third depth A3; thereafter, referring to FIGS. 1I and2I, forming a second metal layer 160 within the second aperture 151, thethird apertures 152, the fourth apertures 153 and the slot 154 andenabling the second metal layer 160 to have a second inductor portion161, a plurality of third inductor portions 162, a plurality of fourthinductor portions 163 and a metal core 164, wherein the second inductorportion 161 is coupled with the first conductive pad 131 and comprises afirst top surface 161 a and a second height H2, each of the thirdinductor portions 162 is coupled with each of the second connectionterminals 132 b and comprises a second top surface 162 a and a thirdheight H3, each of the fourth inductor portions 163 is coupled with eachof the first connection terminals 132 a and comprises a third topsurface 163 a and a fourth height H4, wherein the first height H1 isrespectively smaller than the second height H2, third height H3 andfourth height H4, besides, the metal core 164 comprises a bottom surface164 a and a fourth top surface 164 b, the first metal layer 130comprises an upper surface 133, a first interval B1 is formed betweenthe bottom surface 164 a and the upper surface 133, in this embodiment,the fourth top surface 164 b of the metal core 164 is respectively lowerthan the first top surface 161 a of the second inductor portion 161, thesecond top surface 162 a of each of the third inductor portions 162 andthe third top surface 163 a of each of the fourth inductor portions 163,besides, the material of the second inductor portion 161, the thirdinductor portion 162, the fourth inductor portion 163 and the metal core164 can be chosen from one of nickel, iron or combination of nickel andiron; after that, with reference to FIGS. 1J and 2J, removing the secondphotoresist layer 150; next, referring to FIGS. 1K and 2K, forming asecond dielectric layer 170 on the first dielectric layer 140 andcovering the second metal layer 160 with the second dielectric layer170, wherein the second dielectric layer 170 comprises a first exposedhole 171, a plurality of second exposed holes 172 and a plurality ofthird exposed holes 173, in this embodiment, the first exposed hole 171reveals the first top surface 161 a, each of the second exposed holes172 reveals each of the second top surfaces 162 a, and each of the thirdexposed holes 173 reveals each of the third top surfaces 163 a; next,referring to FIGS. 1L and 2L, forming a third photoresist layer 180 onthe second dielectric layer 170; afterwards, with reference to FIGS. 1Mand 2M, patterning the third photoresist layer 180 to form a fifthaperture 181 and a plurality of sixth apertures 182, wherein the fifthaperture 181 reveals the first top surface 161 a and the second topsurface 162 a, each of the sixth apertures 182 reveals each of thesecond top surfaces 162 a and each of the third top surfaces 163 a;referring to FIGS. 1N and 2N, forming a third metal layer 190 within thefifth aperture 181 and the sixth apertures 182 and enabling the thirdmetal layer 190 to have a fifth inductor portion 191 and a plurality ofsixth inductor portions 192, wherein the fifth inductor portion 191 iscoupled with the second inductor portion 161 and the third inductorportion 162, each of the sixth inductor portions 192 is coupled with thethird inductor portion 162 and the fourth inductor portion 163, in thisembodiment, the material of the fifth inductor portion 191 and the sixthinductor portion 192 can be chosen from one of copper, silver or thecombination of copper and silver, the fifth inductor portion 191comprises a fifth height H5, each of the sixth inductor portions 192comprises a sixth height H6, mentioned fifth height H5 is respectivelysmaller than the second height H2, third height H3 and the fourth heightH4, and the sixth height H6 is respectively smaller than the secondheight H2, third height H3 and fourth height H4, in this embodiment, thethird metal layer 190 comprises a lower surface 193, and a secondinterval B2 is formed between the fourth top surface 164 b of the metalcore 164 and the lower surface 193; later, with reference to FIGS. 1Oand 2O, removing the third photoresist layer 180; finally, referring toFIGS. 1P and 2P, forming a third dielectric layer D within the seconddielectric layer 170 and covering the third metal layer 190 with thethird dielectric layer D thereby forming a three-dimensional inductorcarrier with metal core 100. Besides, the three-dimensional inductorcarrier with metal core 100 further comprises a second conductive pad P1formed on the protective layer 113, the second conductive pad P1 iselectrically connected with the second bond pad 114 of the substrate110, the second metal layer 160 comprises a seventh inductor portion165, the third metal layer 190 comprises an eighth inductor portion 194,the second conductive pad P1 is coupled with the seventh inductorportion 165, and the eighth inductor portion 194 is coupled with theseventh inductor portion 165 and the fourth inductor portion 163.

Or, please refers to FIG. 3, which represents a second preferredembodiment of this invention. In this embodiment, the method forfabricating the three-dimensional inductor carrier with metal corefurther comprises the step of forming a nickel-gold protective layer Mon the third metal layer 190 to replace the step of forming a thirddielectric layer D on the second dielectric layer 170. Or, please refersto FIG. 4, which represents a third preferred embodiment of thisinvention. In this embodiment, a solder protection layer S is formed onthe third metal layer 190, and the material of the solder protectionlayer S can be solder or unleaded solder.

Or, please refers to FIG. 5, which represents a fourth preferredembodiment of this invention. The second conductive pad P1 is formed onthe second dielectric layer 170, and the eighth inductor portion 194 ofthe third metal layer 190 is coupled with the second conductive pad P1and the fourth inductor portion 163. Further, referring to FIG. 6, whichrepresents a fifth preferred embodiment of this invention. Thethree-dimensional inductor carrier with metal core 100 further comprisesa third conductive pad P2, the second conductive pad P1 and the thirdconductive pad P2 are formed on the second dielectric layer 170, thesecond conductive pad P1 is coupled with the eighth inductor potion 194of the third metal layer 190, and the third conductive pad P2 iselectrically connected with the fifth inductor portion 191. In thisinvention, the inductor carrier possesses the structure ofthree-dimensional inductor and additional metal core thereby reducingthe chip size and the layout area in a same plane. Besides, mentionedstructure may increase coil density and magnetic flux. Furthermore, themagnetic flux direction of the inductor changes from normal tohorizontal for three-dimensional designs of the inductor, and it isbeneficial for electro-magnetic coupling of flip chip module in the flipchip process.

A three-dimensional inductor carrier with metal core 100 in accordancewith a first preferred embodiment of this invention is shown in FIGS. 1Pand 2P. The three-dimensional inductor carrier with metal core 100 atleast comprises a substrate 110, a first metal layer 130, a firstdielectric layer 140, a second metal layer 160, a second dielectriclayer 170, a metal core 164, a third metal layer 190, a secondconductive pad P1 and a third dielectric layer D, wherein the substrate110 comprises a surface 111, at least one first bond pad 112, aprotective layer 113 and a second bond pad 114, the first bond pad 112is disposed on the surface 111, the protective layer 113 is formed onthe surface 111 and comprises at least one first pad opening 113 a, andthe first pad opening 113 a reveals the first bond pad 112. In thisembodiment, the material of the substrate 110 can be chosen from one ofAluminum Oxide substrate, Aluminum Nitride substrate, Gallium Arsenicsubstrate or glass substrate. The protective layer 113 can be apassivation layer or a repassivation layer. The first metal layer 130 isformed on the protective layer 113 and comprises a first conductive pad131 and a plurality of first inductor portions 132, each of the firstinductor portions 132 comprises a first connection terminal 132 a, asecond connection terminal 132 b and a first height H1. The firstdielectric layer 140 is formed on the protective layer 113 and coversthe first metal layer 130, wherein the first dielectric layer 140comprises a second pad opening 141, a plurality of first connectionopenings 142 and a plurality of second connection openings 143, thesecond pad opening 141 reveals the first conductive pad 131, each of thefirst connection openings 142 reveals each of the first connectionterminals 132 a, and each of the second connection openings 143 revealseach of the second connection terminals 132 b. The second metal layer160 is formed on the first dielectric layer 140 and comprises a secondinductor portion 161, a plurality of third inductor portions 162, and aplurality of fourth inductor portions 163, wherein the second inductorportion 161 is coupled with the first conductive pad 131 and comprises afirst top surface 161 a and a second height H2, each of the thirdinductor portions 162 is coupled with each of the first connectionterminals 132 a and comprises a second top surface 162 a and a thirdheight H3, each of the fourth inductor portions 163 is coupled with eachof the second connection terminals 132 b and comprises a third topsurface 163 a and a fourth height H4, wherein the first height H1 isrespectively smaller than the second height H2, third height H3 andfourth height H4. The material of the second inductor portion 161, thethird inductor portion 162 and the fourth inductor portion 163 can bechosen from one of nickel, iron or combination of nickel and iron. Thesecond dielectric layer 170 is formed on the first dielectric layer 140and covers the second metal layer 160, the second dielectric layer 170comprises a first exposed hole 171, a plurality of second exposed holes172 and a plurality of third exposed holes 173, wherein the firstexposed hole 171 reveals the first top surface 161 a, each of the secondexposed holes 172 reveals each of the second top surfaces 162 a, andeach of the third exposed holes 173 reveals each of the third topsurfaces 163 a. The metal core 164 is formed on the first dielectriclayer 140 and located between each of the third inductor portions 162and each of the fourth inductor portions 163, besides, the material ofthe metal core 164 can be chosen from one of nickel, iron or combinationof nickel and iron. The metal core 164 comprises a bottom surface 164 aand a fourth top surface 164 b, the first metal layer 130 comprises anupper surface 133, a first interval B1 is formed between the bottomsurface 164 a and the upper surface 133, wherein the fourth top surface164 b of the metal core 164 is respectively lower than the first topsurface 161 a of the second inductor portion 161, the second top surface162 a of each of the third inductor portions 162 and the third topsurface 163 a of each of the fourth inductor portions 163. The thirdmetal layer 190 is formed on the second dielectric layer 170 andcomprises a fifth inductor portion 191, a plurality of sixth inductorportions 192 and a lower surface 193. In this embodiment, the materialof the fifth inductor portion 191 and the sixth inductor portion 192 canbe chosen from copper, silver or the combination of copper and silver,the fifth inductor portion 191 is coupled with the second inductorportion 161 and the third inductor portion 162, each of the sixthinductor portions 192 is coupled with the third inductor portion 162 andthe fourth inductor portion 163. The fifth inductor portion 191comprises a fifth height H5, each of the sixth inductor portions 192comprises a sixth height H6, wherein the fifth height H5 is respectivelysmaller than the second height H2, third height H3 and fourth height H4,and the sixth height H6 is respectively smaller than the second heightH2, third height H3 and fourth height H4. A second interval B2 is formedbetween the fourth top surface 164 b of the metal core 164 and the lowersurface 193 of the third metal layer 190. The second conductive pad P1is formed on the protective layer 113 and electrically connected withthe second bond pad 114 of the substrate 110. The second metal layer 160further comprises a seventh inductor portion 165 electrically connectedwith the second conductive pad P1, and the third metal layer 190 furthercomprises an eighth inductor portion 194 electrically connected with theseventh inductor portion 165 and the fourth inductor portion 163. Thethird dielectric layer D is formed on the second dielectric layer 170and covers the third metal layer 190.

While this invention has been particularly illustrated and described indetail with respect to the preferred embodiments thereof, it will beclearly understood by those skilled in the art that it is not limited tothe specific features and describes and various modifications andchanges in form and details may be made without departing from thespirit and scope of this invention.

What is claimed is:
 1. A three-dimensional inductor carrier with metalcore comprises: a substrate having a surface, at least one first bondpad and a protective layer, wherein the first bond pad is disposed onthe surface, the protective layer is formed on the surface and comprisesat least one first pad opening, and the first pad opening reveals thefirst bond pad; a first metal layer formed on the protective layer, thefirst metal layer comprises a first conductive pad and a plurality offirst inductor portions, each of the first inductor portions comprises afirst connection terminal, a second connection terminal and a firstheight; a first dielectric layer formed on the protective layer andcovering the first metal layer, the first dielectric layer comprises asecond pad opening, a plurality of first connection openings and aplurality of second connection openings, wherein the second pad openingreveals the first conductive pad, each of the first connection openingsreveals each of the first connection terminals, and each of the secondconnection openings reveals each of the second connection terminals; asecond metal layer formed on the first dielectric layer, the secondmetal layer comprises a second inductor portion, a plurality of thirdinductor portions and a plurality of fourth inductor portions, whereinthe second inductor portion is coupled with the first conductive pad andcomprises a first top surface and a second height, each of the thirdinductor portions is coupled with each of the first connection terminalsand comprises a second top surface and a third height, each of thefourth inductor portions is coupled with each of the second connectionterminals and comprises a third top surface and a fourth height, and thefirst height is respectively smaller than the second height, thirdheight and fourth height; a second dielectric layer formed on the firstdielectric layer and covering the second metal layer, the seconddielectric layer comprises a first exposed hole, a plurality of secondexposed holes and a plurality of third exposed holes, wherein the firstexposed hole reveals the first top surface, each of the second exposedholes reveals each of the second top surfaces, and each of the thirdexposed holes reveals each of the third top surfaces; a metal coreformed on the first dielectric layer, the metal core is located betweeneach of the third inductor portions and each of the fourth inductorportions, the metal core comprises a bottom surface, the first metallayer comprises an upper surface, a first interval is formed between thebottom surface and the upper surface; and a third metal layer formed onthe second dielectric layer, the third metal layer comprises a fifthinductor portion and a plurality of sixth inductor portions, the fifthinductor portion comprises a fifth height and is coupled with the secondinductor portion and the third inductor portion, each of the sixthinductor portions comprises a sixth height and is coupled with the thirdinductor portion and the fourth inductor portion, the fifth height isrespectively smaller than the second height, third height and fourthheight, and the sixth height is respectively smaller than the secondheight, third height and fourth height.
 2. The three-dimensionalinductor carrier with metal core in accordance with claim 1, wherein thethird metal layer comprises a lower surface, the metal core comprises afourth top surface, a second interval is formed between the fourth topsurface and the lower surface.
 3. The three-dimensional inductor carrierwith metal core in accordance with claim 1, wherein the metal corecomprises a fourth top surface, the fourth top surface of the metal coreis respectively lower than the first top surface of the second inductorportion, the second top surface of each of the third inductor portionsand the third top surface of each of the fourth inductor portions. 4.The three-dimensional inductor carrier with metal core in accordancewith claim 1, wherein the material of the fifth inductor portion and thesixth inductor portion can be chosen from one of copper, silver or thecombination of copper and silver.
 5. The three-dimensional inductorcarrier with metal core in accordance with claim 1, wherein the materialof the second inductor portion, the third inductor portion, the fourthinductor portion and the metal core can be chosen from one of nickel,iron or the combination of nickel and iron.
 6. The three-dimensionalinductor carrier with metal core in accordance with claim 1, furthercomprises a second conductive pad formed on the protective layer, andthe substrate further comprises a second bond pad electrically connectedwith the second conductive pad.
 7. The three-dimensional inductorcarrier with metal core in accordance with claim 1, wherein the secondmetal layer comprises a seventh inductor portion coupled with the secondconductive pad.
 8. The three-dimensional inductor carrier with metalcore in accordance with claim 7, wherein the third metal layer comprisesan eighth inductor portion coupled with the seventh inductor portion andthe fourth inductor portion.
 9. The three-dimensional inductor carrierwith metal core in accordance with claim 1, further comprises a secondconductive pad formed on the second dielectric layer, and the thirdmetal layer comprises an eighth inductor portion electrically connectedwith the second conductive pad and the fourth inductor portion.
 10. Thethree-dimensional inductor carrier with metal core in accordance withclaim 1, further comprises a third dielectric layer formed on the seconddielectric layer, and the third metal layer is covered by the thirddielectric layer.
 11. The three-dimensional inductor carrier with metalcore in accordance with claim 1, further comprises a nickel-goldprotective layer formed on the third metal layer
 12. Thethree-dimensional inductor carrier with metal core in accordance withclaim 1, further comprises a third conductive pad formed on the seconddielectric layer, and the fifth inductor portion is electricallyconnected with the third conductive pad.